PhotoMetrics, Inc.
15801 Graham St.
Huntington Beach CA 92649
(714) 895-4465
Fax (714) 893-4682
e-mail: lab@photometrics.net

Field Emission
Scanning Electron Microscopy (FESEM)

Principle of Operation

A field-emission cathode in the electron gun of a scanning electronmicroscope provides narrower probing beams at low as well as high electronenergy, resulting in both improved spatial resolution and minimized samplecharging and damage. For applications which demand the highest magnification possible, we also offer In-lens FESEM.

Applications include:

Semiconductor device cross section analyses for gate widths, gate oxides,film thicknesses, and construction details

Advanced coating thickness and structure uniformity determination

Small contamination feature geometry and elemental composition measurement

Why Field Emission SEM?

FESEM produces clearer, less electrostatically distorted images withspatial resolution down to 1 1/2 nm. That's 3 to 6 times better than conventional SEM.

Smaller-area contamination spots can be examined at electron acceleratingvoltages compatible with Energy Dispersive X-ray Spectroscopy.

Reduced penetration of low kinetic energy electrons probes closer tothe immediate material surface.

High quality, low voltage images are obtained with negligible electricalcharging of samples. (Accelerating voltages range from 0.5 to 30 kV.)

Need for placing conducting coatings on insulating materials is virtuallyeliminated.

For ultra-high magnification imaging, use our In-lensFESEM.

Cross-section of a laser window showing multiple thin layers at 50,000x.(in the original photo)

Cross section of contact on silicon

Cross section of via openings