15801 Graham St.
Huntington Beach CA 92649
Fax (714) 893-4682
Scanning Electron Microscopy (FESEM)
Principle of Operation
A field-emission cathode in the electron gun of a scanning
electronmicroscope provides narrower probing beams at low as well
as high electronenergy, resulting in both improved spatial
resolution and minimized samplecharging and damage. For
applications which demand the highest magnification possible, we
also offer In-lens
- Semiconductor device cross section analyses for gate
widths, gate oxides,film thicknesses, and construction
- Advanced coating thickness and structure uniformity
- Small contamination feature geometry and elemental
Why Field Emission SEM?
- FESEM produces clearer, less electrostatically distorted
images withspatial resolution down to 1 1/2 nm. That's 3 to 6
times better than conventional SEM.
- Smaller-area contamination spots can be examined at electron
acceleratingvoltages compatible with Energy Dispersive X-ray
- Reduced penetration of low kinetic energy electrons probes
closer tothe immediate material surface.
- High quality, low voltage images are obtained with negligible
electricalcharging of samples. (Accelerating voltages range from
0.5 to 30 kV.)
- Need for placing conducting coatings on insulating materials
- For ultra-high magnification imaging, use our In-lensFESEM.
Cross-section of a laser window showing multiple thin layers
at 50,000x.(in the original photo)
Cross section of contact on
Cross section of via openings
SEM FESEM EDS AFM
WDS AUGER FTIR Thermal Analysis